HiSIM2.4.0: Advanced MOSFET Model for the 45nm Technology Node and Beyond

Abstract

HiSIM realizes both accurate and fast circuit simulation. The HiSIM2 version includes required features in modeling for the 45nm technology node and beyond such as the STI effect. A major development is an improved model consistency, which enables even modeling of the technology variation accurately. HiSIM2.4.0 includes also the binning option to take into… (More)

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10 Figures and Tables