HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits

@article{Mattausch2008HiSIMHVAC,
  title={HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits},
  author={H. J. Mattausch and Taiji Kajiwara and M. Yokomichi and Takashi Sakuda and Yasunori Oritsuki and Masataka Miyake and Norio Sadachika and Hideyuki Kikuchihara and Uwe Feldmann and Mitiko Miura-Mattausch},
  journal={2008 9th International Conference on Solid-State and Integrated-Circuit Technology},
  year={2008},
  pages={276-279}
}
The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several 100 V switching capability. Accurate scaling properties for channel and drift-region length as well as channel width are also provided. 
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