• Corpus ID: 13245310

HfOx-Based RRAM Cells with Fully CMOS Compatible Technology

  title={HfOx-Based RRAM Cells with Fully CMOS Compatible Technology},
  author={X. P. Wang and Zhi Xian Chen and Xiang Li and Aashit Kamath and Lei Jun Tang and Doreen Mei and Yin-Lai Lai and Poh Chong Lim and Dan Li and Navab Singh and P. Guo and Qiang Lo and Dim Lee Kwong},
In this work, different HfOX-based RRAM stacks, involving n + -Si, NiSi or Ni(Ge1-XSiX) bottom electrode which can be easily integrated with source/drain of a transistor, are systematically investigated. It has been found that the involvement of Ni (or NiOx formed) in the stack is very beneficial to good switching properties. More importantly, RESET current can be effectively reduced for silicide electrodes as compared with n + -Si case, attributed to the formation of thicker interfacial layer… 

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