• Corpus ID: 13245310

HfOx-Based RRAM Cells with Fully CMOS Compatible Technology

@inproceedings{Wang2012HfOxBasedRC,
  title={HfOx-Based RRAM Cells with Fully CMOS Compatible Technology},
  author={X. P. Wang and Zhi Xian Chen and Xiang Li and Aashit Kamath and Lei Jun Tang and Doreen Mei and Yin-Lai Lai and Poh Chong Lim and Dan Li and Navab Singh and P. Guo and Qiang Lo and Dim Lee Kwong},
  year={2012}
}
In this work, different HfOX-based RRAM stacks, involving n + -Si, NiSi or Ni(Ge1-XSiX) bottom electrode which can be easily integrated with source/drain of a transistor, are systematically investigated. It has been found that the involvement of Ni (or NiOx formed) in the stack is very beneficial to good switching properties. More importantly, RESET current can be effectively reduced for silicide electrodes as compared with n + -Si case, attributed to the formation of thicker interfacial layer… 

Figures and Tables from this paper

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

In this paper, we study the effect of highly doped n<sup>+</sup>/p<sup>+</sup> Si as the bottom electrode on unipolar RRAM with Ni-electrode/ HfO<i>x</i> structure. With heavily doped

A Collective Study on Modeling and Simulation of Resistive Random Access Memory

This review provides detailed information regarding the various physical methodologies considered for developing models for RRAM devices and elucidates their features and limitations.

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

In this letter, a bipolar resistive switching RAM based on Ni/AlO<i>y</i>/n<sup>+</sup>-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully

Memristive switching: physical mechanisms and applications

This paper reviews the many classes of memristive switching, their physical mechanisms, and their fabrication and operational modes, and discusses the applications and believed technological potential of these fascinating and exciting devices.

References

SHOWING 1-10 OF 17 REFERENCES

Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mum CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side

High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

A new contact RRAM cell realized by TiN/TiON layers stacked between the W-plug and n+ diffusion region inside a small 80×80nm contact hole is demonstrated using 90nm CMOS logic technology. This work

Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAM

Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of

Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

  • I. BaekM.S. Lee J. Moon
  • Engineering
    IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
  • 2004
Simple binary-TMO (transition metal oxide) resistive random access memory named as OxRRAM has been fully integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties are

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

In this paper, we show the coexistence of the bipolar and unipolar resistive-switching modes in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the bottom

Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

In this paper, we report a high performance, forming-free and self-rectifying unipolar HfOx based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS

$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

In this letter, a significantly improved uniformity of device parameters (for cycle-to-cycle uniformity within one device and device-to-device uniformity), such as set voltage, reset voltage, and HRS

Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe∕Si(001), and strained Si/relaxed SiGe∕Si(001) and effect of postthermal annealing

This study compared the formation of nickel silicide or germanosilicide layers on various SiGe based heterostructures as well as the effects of the different annealing schemes (one-step versus

Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

We report a dual oxide layer as the active memory element of a scalable nonvolatile cross-point memory technology. The resistance change memory element is formed by a conductive metal oxide adjacent

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

  • I. BaekD. Kim B. Ryu
  • Materials Science
    IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
  • 2005
Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application.