Corpus ID: 237374343

Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits

@inproceedings{Wang2021HexagonalBN,
  title={Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits},
  author={Joel I-J. Wang and Megan A Yamoah and Qing Li and Amir H. Karamlou and Thao H. Dinh and Bharath Kannan and Jochen Braumueller and David K. Kim and A. Melville and Sarah Muschinske and Bethany M. Niedzielski and K. Serniak and Youngkyu Sung and Roni Winik and Jonilyn L. Yoder and Mollie E. Schwartz and Kenji Watanabe and Takashi Taniguchi and T. P. Orlando and Simon Gustavsson and Pablo Jarillo-Herrero and William D. Oliver},
  year={2021}
}
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solidstate quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe2-hBN-NbSe2 heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10-6 range in the low temperature, single… Expand
1 Citations

Figures and Tables from this paper

Miniaturizing transmon qubits using van der Waals materials
Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, recently demonstrated in systems of superconducting qubits. However, theExpand

References

SHOWING 1-10 OF 29 REFERENCES
Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits
We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates. TheExpand
Single crystal silicon capacitors with low microwave loss in the single photon regime
We have fabricated superconducting microwave resonators in a lumped element geometry using single crystal silicon dielectric parallel plate capacitors with C>2 pF. Aluminum devices with resonantExpand
Determining Interface Dielectric Losses in Superconducting Coplanar-Waveguide Resonators
Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding theseExpand
Decoherence in Josephson qubits from dielectric loss.
TLDR
With a redesigned phase qubit employing low-loss dielectrics, the energy relaxation rate has been improved by a factor of 20, opening up the possibility of multiqubit gates and algorithms. Expand
Coherent Josephson qubit suitable for scalable quantum integrated circuits.
TLDR
This work demonstrates a planar, tunable superconducting qubit with energy relaxation times up to 44 μs and finds a fine structure in the qubit energy lifetime as a function of frequency, indicating the presence of a sparse population of incoherent, weakly coupled two-level defects. Expand
Enhanced-coherence all-nitride superconducting qubit epitaxially grown on Si substrate
We have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on Si substrates which promise to overcome the drawbacks of qubits based on Al/AlOx/Al junctions. TheExpand
Investigating Surface Loss Effects in Superconducting Transmon Qubits
Superconducting qubits are sensitive to a variety of loss mechanisms including dielectric loss from interfaces. By changing the physical footprint of the qubit, it is possible to modulate sensitivityExpand
A ballistic graphene superconducting microwave circuit
TLDR
A gate-tunable Josephson inductance is observed in a microwave circuit based on a ballistic graphene Josephson junction embedded in a superconducting cavity, suggesting that grapheneJosephson junctions are a feasible platform for implementing coherent quantum circuits. Expand
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)
TLDR
The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors and paves the way to future 2D electronics. Expand
Photonics with hexagonal boron nitride
For more than seven decades, hexagonal boron nitride (hBN) has been employed as an inert, thermally stable engineering ceramic; since 2010, it has also been used as the optimal substrate for grapheneExpand
...
1
2
3
...