Heterogeneous stacking silicon controlled rectifier design with improved ESD performance

@article{Dong2017HeterogeneousSS,
  title={Heterogeneous stacking silicon controlled rectifier design with improved ESD performance},
  author={Aihua Dong and Linfeng He and Wei Liang and Javier A. Salcedo and Jean-Jacques Hajjar and Juin J. Liou and Kalpathy Sundaram},
  journal={2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)},
  year={2017},
  pages={1-3}
}
A novel design consisting of a heterogeneous stacking of silicon control rectifier is proposed in this paper. A latch-up free design in a high voltage BCDMOS process is demonstrated. Structures based on this method are compared with conventionally stacked SCR structure. Comprehensive characterization, including DC and transmission line pulsing (TLP), is undertaken to demonstrate the performance.