Heterogeneous lasers and coupling to Si₃N₄ near 1060 nm.

@article{Bovington2014HeterogeneousLA,
  title={Heterogeneous lasers and coupling to Si₃N₄ near 1060 nm.},
  author={Jock Bovington and Martijn J. R. Heck and John E. Bowers},
  journal={Optics letters},
  year={2014},
  volume={39 20},
  pages={6017-20}
}
A III-V/Si₃N₄ platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si₃N… CONTINUE READING