Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation

@inproceedings{Garozzo1982HeteroepitaxialGO,
  title={Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation},
  author={M. Garozzo and Gennaro Conte and Florestano Evangelisti and G. Vitali},
  year={1982}
}
The heteroepitaxial growth of Ge on 〈111〉 Si substrates has been obtained by thermal and electron gun evaporation in the deposition temperature range 375–425 °C. Reflection high‐energy electron diffraction analysis shows that the films are 〈111〉 oriented and exhibit high crystalline quality with no evidence of twins. It was also found that the films are p type with the same mobility as bulk Ge single crystals. 

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