Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition

@inproceedings{Tahara2018HeteroepitaxialGO,
  title={Heteroepitaxial growth of ε-(AlxGa1−x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition},
  author={Daisuke Tahara and Hiroyuki Nishinaka and Shota Morimoto and Masahiro Yoshimoto},
  year={2018}
}
In this study, e-(AlxGa1−x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the e-(AlxGa1−x)2O3 alloy films followed Vegard's law, and the Al contents of other samples were determined to be as high as x = 0.395 by Vegard's law. The direct bandgap was obtained in the range of 5.0–5.9 eV by transmittance measurements. The valence-band offset between e… CONTINUE READING