Heterodimensional field effect transistors for ultra low power applications

@article{Lu1998HeterodimensionalFE,
  title={Heterodimensional field effect transistors for ultra low power applications},
  author={Jian-Qiang Lu and M R Hurt and W.C.B. Peatman and M. S. Shur},
  journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)},
  year={1998},
  pages={187-190}
}
We describe a new class of field effect transistors (FETs) based on a heterodimensional contact between a three-dimensional gate (metal or semiconductor) and a two-dimensional electron gas. The heterodimensional FET family (2D MESFET, 2DI MESFET, and 2D JFET) has shown significant promise for future high speed, ultra low power applications. We review the recent developments, and report on a new fully ion implanted quasi-heterodimensional FET, the coax-2D JFET. 

Citations

Publications citing this paper.
Showing 1-3 of 3 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 27 references

Introduction to Device and Circuit Modeling for VLSI

  • T. Fjeldly, T. Ytterdal, M. S. Shur
  • John Wiley and Sons, New York
  • 1998

Enhancement of Schottky Barrier Height in Hetero - dimensional Metal - Semiconductor Contacts

  • M. S. Shur, M. Hurt, W. C. B. Peatman
  • Appl . Phys . Lett .
  • 1997

Heterodimensional MESFETs for Ultra Low Power Electronics

  • T. Ytterdal, M. S. Shur, W.C.B. Peatman, M. Hurt
  • Advanced Workshop on Frontiers in Electronics…
  • 1997

Laterally Modulated, Heterodimensional Junction Field Effect Transistor for Ultra Low Power Applications

  • M. J. Hurt, W.C.B. Peatman, M. Shur
  • Proceedings of the
  • 1997

Multi - Channel 2 - D MESFET for Microwave Applications

  • W. C. B. Peatman, R. M. Weikle, M. Shur
  • 1997

RTD/2-D MESFET Logic Element for Compact

  • J. Robertson, T. Ytterdal, W.C.B. Peatman, R. Tsai, E. Brown, M. Shur
  • Ultra Low-Power Electronics,” IEEE Trans. on…
  • 1997

W

  • T. Ytterdal, M. S. Shur, M. Hurt
  • C. B. Peatman, “Enhancement of Schottky Barrier…
  • 1997
1 Excerpt

An Ion - Implanted 0 . 4 mm Wide 2 - D MESFET for Low Power Electronics

  • M. J. Hurt, W. C. B. Peatman, R. Tsai, T. Ytterdal, M. Shur, B. J. Moon
  • 1996

The Optoelectronic Response of a Laterally Contacted 2 - D MESFET

  • R. Tsai, F. Schuenneyer, W. C. B. Peatman, M. Shur
  • IEEE Trans . on Electron Devices
  • 1996

Similar Papers

Loading similar papers…