Heterodimensional field effect transistors for ultra low power applications

  title={Heterodimensional field effect transistors for ultra low power applications},
  author={Jian-Qiang Lu and M R Hurt and W.C.B. Peatman and M. S. Shur},
  journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)},
We describe a new class of field effect transistors (FETs) based on a heterodimensional contact between a three-dimensional gate (metal or semiconductor) and a two-dimensional electron gas. The heterodimensional FET family (2D MESFET, 2DI MESFET, and 2D JFET) has shown significant promise for future high speed, ultra low power applications. We review the recent developments, and report on a new fully ion implanted quasi-heterodimensional FET, the coax-2D JFET. 


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1 Excerpt

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