Corpus ID: 199064361

Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate.

@article{Wrbel2019HeavyholeBS,
  title={Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate.},
  author={Jarosław Wr{\'o}bel and Gilberto A. Umana-Membreno and Jacek Boguski and Dariusz Sztenkiel and Paweł Piotr Michałowski and Piotr Martyniuk and Lorenzo Faraone and Jerzy Wr{\'o}bel and Antoni Rogalski},
  journal={arXiv: Materials Science},
  year={2019}
}
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most populated holelike channel below 55 K. The multilayer model concluded from the QMSA results has been… Expand

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