Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates

@article{Cannon2009HeavyIA,
  title={Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates},
  author={E. Cannon and M. Caba{\~n}as-Holmen},
  journal={IEEE Transactions on Nuclear Science},
  year={2009},
  volume={56},
  pages={3511-3518}
}
We measure heavy ion and proton-induced SETs in inverters, and NAND and NOR gates from a 90 nm RHBD library. NAND and NOR gates have higher SET cross section and generate wider pulses than inverters. 
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