Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets

@article{Kobayashi2018HeavyIonSE,
  title={Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets},
  author={Daisuke Kobayashi and Kazuyuki Hirose and Taichi Ito and Yuya Kakehashi and Osamu Kawasaki and Takahiro Makino and Takeshi Ohshima and Daisuke Matsuura and Takanori Narita and Masahiro Kato and Shigeru Ishii and Kazunori Masukawa},
  journal={IEEE Transactions on Nuclear Science},
  year={2018},
  volume={65},
  pages={523-532}
}
Silicon-on-insulator technology is often used to develop high-reliability devices with low sensitivity to single-event upsets or soft errors. Its key component, the buried-oxide (BOX) layer, is now thinned down to 10 nm. This thinning enables transistors on the layer to be efficiently conditioned by back-bias voltages fed underneath the layer. However, a little is known about the influence of such conditioning on the sensitivity to soft errors caused by heavy ion radiation. A static random… CONTINUE READING