Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs


Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce¿le¿rateur National d'Ions Lourds, Caen, France, and the University of Jyva¿skyla¿, Finland. The data were captured using a custom broadband… (More)


9 Figures and Tables