Heavy-Ion Induced SETs in 32nm SOI Inverter Chains

Abstract

A comprehensive data set of heavy-ion induced single-event transients has been collected for inverter chains fabricated in the IBM 32nm partially-depleted silicon-on-insulator technology across various bias voltages, transistor variants, ion energies and angles of incidence. 

11 Figures and Tables

Topics

  • Presentations referencing similar topics