Heat and charge transport in bulk semiconductors with interstitial defects

@article{Proshchenko2019HeatAC,
  title={Heat and charge transport in bulk semiconductors with interstitial defects},
  author={Vitaly S. Proshchenko and Pratik P Dholabhai and Sanghamitra Neogi},
  journal={Physical Review B},
  year={2019}
}
Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was accomplished only recently with the advent of first-principles modeling techniques, supported by powerful experimental methods. However, much less attention has been paid to the effect of different naturally occurring interstitials on the thermal… Expand
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