Heat Generation and Transport in Nanometer-Scale Transistors

Abstract

As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot spots in the transistor drain region, which may increase the drain series and source injection electrical resistances. Such trends are accelerated by the… (More)
DOI: 10.1109/JPROC.2006.879794

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