Hall effects and noise measurements in epitaxial, polycrystalline, and amorphous Ge

@article{Lomas1973HallEA,
  title={Hall effects and noise measurements in epitaxial, polycrystalline, and amorphous Ge},
  author={Robert A. Lomas and Michael John Hampshire and R. D. Tomlinson and K. F. Knott},
  journal={Physica Status Solidi (a)},
  year={1973},
  volume={16},
  pages={385-394}
}
Data are given of the hall mobility, carrier concentration and conductivity for epitaxial, polycrystalline, and amorphous Ge films over a temperature range 100 to 400 K; all specimens are found to be p-type. The room temperature noise spectra for these films are also given. It is found that amorphous films can be characterised by the presence of generation–recombination noise with time constants of 4.5 × 10−3 and 2 × 10−5 s wheras in crystalline films only 1/f noise is present. An activated… Expand
Evidence of a polycrystalline phase in amorphous Ge films evaporated at room temperature
By studying the X-ray photoelectron spectra, a mixture of amorphous and polycrystalline phases is detected in Ge thin films prepared at about room temperature and ≈ 10−6 Torr pressure. The thin filmsExpand
DC conductivity of amorphous germanium
Abstract A critical review of the phonon-assisted hopping theory of the dc conductivity σ is given. It is argued that the current theories either contain uncontrollable approximations, or they yieldExpand
AGEING EFFECTS AND EXCESS NOISE IN ION BEAM IRRADIATED POLYMER FILMS
Thin films of HPR-204 polymer have been bombarded with 1.5 MeV, Ar ions to doses in the range 10 14 to 10 17 cm −2 . Resistivity and excess noise was found to change dramatically with dose. ThisExpand
Study of classical Hall effect in an amorphous As2S3 semiconducting glass
An experimental study of the classical Hall effect was carried out on amorphous As2S3 semiconducting glass. The experiments were performed on thin samples of As2S3 which were prepared in anExpand
Amorphous bismuth-germanium thin films. I. Structural and electrical properties
Thin films of bismuth‐germanium have been fabricated by the method of codeposit vapor quenching onto liquid nitrogen or water‐cooled substrates. Structural, electrical, optical, and photoelectricalExpand
Different Proportions of a‐Ge and c‐Ge in Dependence on the Substrate Temperature of Evaporated Films Determined by Refractive Index Analysis
Published results of resistivity measurements on evaporated Ge films in dependence on the substrate temperature are modified and completed by conclusions drawn from optical measurements on the sameExpand
Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
The films containing Ge nanoparticles embedded in SiO2 matrix were prepared by RF magnetron sputtering and subsequently by thermal annealing. Their structure was investigated by conventionalExpand
II. Experimental Hall effect data for amorphous semiconductors
Abstract This paper presents the main features of the experimental data on Hall effect measurements in amorphous semiconductors reported so far. More specially, it analyses data on chalcogenideExpand
Thermoelectric power of amorphous germanium films
The temperature dependence of the thermoelectric power (TEP) and the corresponding resistivity of evaporated amorphous (a-)Ge films is studied in the temperature range 140 to 500 K as a function ofExpand
Transport Properties of Amorphous Semiconductors
The investigation of transport properties of amorphous semiconductors in the past has been much stimulated by the interest in possible technical applications. So far these expectations have onlyExpand
...
1
2
...

References

SHOWING 1-10 OF 11 REFERENCES
Electronic transport properties of some low mobility solids under high pressure
Abstract The paper discusses results of drift mobility experiments in orthorhombic S, anthracene, trigonal and vitreous Se carried out under hydrostatic pressure p of up to 6 kbar. Some details ofExpand
Electrical conduction in amorphous germanium
Abstract Germanium has been evaporated in vacuo by resistive and electron beam heating and deposited on to glass substrates at room temperature. The electrical conductivity of the layers has beenExpand
Electronic structure and transport in covalent amorphous semiconducting alloys
A brief review of the CFO model is given in which its principal features and what may be interpreted as its successes are listed. A few new results lending further support to features of the modelExpand
Displacement spike crystallization of amorphous germanium during irradiation
Thin films of metastable amorphous germanium (700 ± 100 A thick), prepared by evaporation on rocksalt, were bombarded with either fast neutrons or monoenergetic Xe+ ions at room temperature.Expand
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
Abstract The experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c. and a.c.Expand
A sensitive method of Hall measurement
A novel system is described for measuring very small Hall voltages by reversing the magnetic field with a time period of 1 s or more. The current is supplied from a direct constant current source andExpand
Hall Mobility of the Small Polaron. II
A perturbation treatment of Kubo's basic formula for the electrical-conductivity tensor is used to derive an expression for the Hall mobility of the small polaron. The result disagrees with those ofExpand
Sign of the Hall effect for hopping transport in molecular crystals
It is shown that the Hall effect for hopping transport may be anomalous in sign, just as it may be for coherent transport in narrow bands. Anthracene is treated as a specific example.
...
1
2
...