Half integer quantum Hall effect in high mobility single layer epitaxial graphene

@article{Wu2009HalfIQ,
  title={Half integer quantum Hall effect in high mobility single layer epitaxial graphene},
  author={Xiaosong Wu and Yike Hu and Ming Ruan and Nerasoa K. Madiomanana and John Hankinson and Mike Sprinkle and Claire Berger and Walter A. de Heer},
  journal={Applied Physics Letters},
  year={2009},
  volume={95},
  pages={223108}
}
The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V⋅s at 4 K and 15 000 cm2/V⋅s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene… Expand

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