Half-Terahertz SiGe BiCMOS technology

  title={Half-Terahertz SiGe BiCMOS technology},
  author={Holger Rucker and Bernd Heinemann and Alexander Fox},
  journal={2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance. 
Highly Cited
This paper has 109 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 84 extracted citations

109 Citations

Citations per Year
Semantic Scholar estimates that this publication has 109 citations based on the available data.

See our FAQ for additional information.


Publications referenced by this paper.
Showing 1-5 of 5 references

A 0.13 μm BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

  • H. Rücker
  • IEEE J. Solid-State Circuits, vol. 45, no. 9, pp…
  • 2010
3 Excerpts

Similar Papers

Loading similar papers…