Half-Terahertz SiGe BiCMOS technology

@article{Rucker2012HalfTerahertzSB,
  title={Half-Terahertz SiGe BiCMOS technology},
  author={Holger Rucker and Bernd Heinemann and Alexander Fox},
  journal={2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
  year={2012},
  pages={133-136}
}
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as a reduced thermal budget and reduced salicide resistance. 
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A 0.13 μm BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

  • H. Rücker
  • IEEE J. Solid-State Circuits, vol. 45, no. 9, pp…
  • 2010
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