Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study.

@article{Williams1999HairRU,
  title={Hair removal using an 810 nm gallium aluminum arsenide semiconductor diode laser: A preliminary study.},
  author={Roger M. Williams and Hayes B. Gladstone and Ronald L. Moy},
  journal={Dermatologic surgery : official publication for American Society for Dermatologic Surgery [et al.]},
  year={1999},
  volume={25 12},
  pages={935-7}
}
BACKGROUND Laser hair removal is a popular treatment method for removing unwanted hair. Several laser systems are available for laser hair removal. The gallium aluminum arsenide semiconductor diode (GAASD) laser is one of the newer laser modalities to be studied. OBJECTIVE To evaluate the efficacy of the GAASD laser system in removing unwanted hair. METHODS Twenty-six patients with brown or black hair growth were treated with the GAASD laser at fluences of 20-80 J/cm2. Hair regrowth was… CONTINUE READING