HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers

@article{Ryu2015HVPEGO,
  title={HVPE growth of self-aligned GaN nanorods on c-plane, a-plane, r-plane, and m-plane sapphire wafers},
  author={Sung Ryong Ryu and S. D. Gopal Ram and Yang Hae Kwon and Woo Chul Yang and Seung Hwan Kim and Yong Deuk Woo and Sun Hye Shin and Tae Won Kang},
  journal={Journal of Materials Science},
  year={2015},
  volume={50},
  pages={6260-6267}
}
Herein, we report the self-aligned growth of GaN nanorods on different orientations of sapphire like c-, a-, r- and m-plane substrates by hydride vapor phase epitaxy. Vertical c-axis orientation of GaN NRs is obtained on c-plane [0001] and a-plane $$ \left[ { 1 1\bar{2}0} \right] $$112¯0 sapphire and a skew or inclined NRs on r-plane, and inclined intertwined but self-aligned NR array was formed on m-plane sapphire. GaN (002) and (004) peaks were obtained on c- and a-plane sapphire, whereas… CONTINUE READING