Corpus ID: 110987625

HIGH VOLTAGE DEVICES FOR STANDARD MOS TECHNOLOGIES - CHARACTERISATION AND MODELLING

@inproceedings{Anghel2004HIGHVD,
  title={HIGH VOLTAGE DEVICES FOR STANDARD MOS TECHNOLOGIES - CHARACTERISATION AND MODELLING},
  author={Costin Anghel},
  year={2004}
}
  • Costin Anghel
  • Published 2004
  • Engineering
  • Abstract This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devices the intrinsic drain voltage concept (V K ) is proposed. The variation of V K is explained and related to the physical effects inside the device and the charge variation. Through the K point potential, the analysis of the channel… CONTINUE READING
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    References

    SHOWING 1-10 OF 127 REFERENCES
    Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET
    • 25
    Universal Test Structure and Characterization Method for Bias-Dependent Drift Series Resistance of HV MOSFETs
    • 10
    • PDF
    Electrical characterisation of high voltage MOSFETs using MESDRIFT
    • C. Anghel, N. Hefyene, +4 authors A. Ionescu
    • Engineering
    • 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676)
    • 2003
    • 3