HIGH VOLTAGE DEVICES FOR STANDARD MOS TECHNOLOGIES - CHARACTERISATION AND MODELLING

@inproceedings{Anghel2004HIGHVD,
  title={HIGH VOLTAGE DEVICES FOR STANDARD MOS TECHNOLOGIES - CHARACTERISATION AND MODELLING},
  author={Costin Anghel},
  year={2004}
}
Abstract This work reports on the analysis of high voltage lateral devices. Two different architectures, self-aligned LDMOS and non-self-aligned XDMOS are presented and used in this work. For the separation of the physical effects that take place inside the HV devices the intrinsic drain voltage concept (V K ) is proposed. The variation of V K is explained and related to the physical effects inside the device and the charge variation. Through the K point potential, the analysis of the channel… CONTINUE READING

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