• Corpus ID: 53344308


  author={Y. Watanabe and Naofumi Okubo},
  journal={Fujitsu Scientific \& Technical Journal},
This paper describes monolithic IC technologies for developing practical automotive radar systems, covering the HEMT device structure, IC fabrication process, flip-chip assembling, and circuit design. InGaP/InGaAs HEMTs with a 0.15-µm gate were used in millimeter-wave monolithic ICs for the W-band, providing a maximum stable gain of 9 dB at 76 GHz. Height-controlled flip-chip bonding with pillar interconnection was demonstrated as a low-cost assembly method. A de-embedding technique to model a… 
4 Citations

Design of X-band complementary metal-oxide semiconductor-based frequency-modulation continuous-wave sensor

The major contribution of this study is that it integrates a 0.18 µm CMOS transceiver and antenna arrays into an FMCW RF front end, and employs an IF amplifier and a digital signal processor to demonstrate that the beat frequencies are linear.

Flip-Chip Assembly for Millimeter-Wave Circuits

ミリ波 は,波 長が10mm~1mmと なる周波数30GHz~ 300GHzの 電波である。 これは携帯電話等で使われている 800MHz帯 ~2GHz帯 や衛星放送等 に使 われている11GHz 帯に比べても非常に高い周波数である。その波長の短 さか ら,回 折の影響が小さく直進性に優れており,レ ーダー等 のセンサに応用することで,空 間分解能の高い検知が可能 になる。また周波数の高 さか

Integrated optical encoder

Design of a millimetre-wave mixer for broadband mobile communications

  • T. BrabetzV. Fusco
  • Computer Science
    MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1999 High Frequency Postgraduate Student Colloquium (Cat. No.99TH8409)
  • 1999
The design process for a state-of-the-art millimetre-wave down converter from 65.5GHz to 1.5 GHz is described in detail and the problem of choosing the correct topology for a given task is discussed.



Compact monolithic coplanar 94 GHz front ends

Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 /spl mu/m AlGaAs/InGaAs/GaAs PM-HEMT technology are described. The MMICs consist of a multistage low noise RF amplifier, a mixer,

76 GHz flip-chip MMICs for automotive radars

  • T. ShimuraY. Kawasaki S. Yokokawa
  • Business, Physics
    1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)
  • 1998
Using the flip-chip bonding technique, we developed a 76-GHz MMIC chip set for automotive radars. A chip set consists of a 76-GHz amplifier, a 76-GHz mixer, 76-GHz SPDT switches, a 38/76-GHz doubler,

Comparison of flip chip and wire bond interconnections and the technology evaluation on 51 GHz transceiver modules

On test vehicles realized in flip chip and wire bond versions, RF-measurements up to 70 GHz had been performed. The evaluation of the results shows the superiority of the flip chip mounting

Reducing the effects of the mounting substrate on the performance of GaAs MMIC flip chips

  • R. Sturdivant
  • Engineering
    Proceedings of 1995 IEEE MTT-S International Microwave Symposium
  • 1995
Flip chip technology has been used in electronic equipment for 25 years or more. This is due to the benefits offered by flip chips such as improved interconnect performance, high reliability, and low

Millimeter-wave performance of chip interconnections using wire bonding and flip chip

The performances of two different interconnection techniques for coplanar MMICs, wire bonding and flip chip, are investigated at millimeter-wave frequencies. By developing an accurate model for the

A flip chip bonding technology using gold pillars for millimeter-wave applications

This paper reports a flip chip bonding technology for a millimeter-wave monolithic integrated circuit (MIMIC) using gold micropillars with a controlled air gap instead of conventional wire bonding.

Commercial applications of millimeterwaves: history, present status, and future trends

The possibility to apply millimeterwaves for various applications in the commercial arena has a long history, as the advantages being offered by such systems have been known for more than three

A flip-chip MMIC design with CPW technology in the W-band

We designed and fabricated a W-band flip-chip MMIC amplifier with a coplanar waveguide (CPW) transmission line using 0.15 /spl mu/m InGaP-InGaAs HEMT technology. In addition, we present a test