HBM parameter extraction and Transient Safe Operating Area

Abstract

The extraction of ESD parameters and a Transient Safe Operating Area (TSOA) based on on-wafer HBM-IV measurements with voltage and current waveform capturing are introduced. The HBM parameters provide an easy way to get valuable insights in the transient device operation of ESD protection devices, circuits and their safe operating area under HBM stress… (More)

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Cite this paper

@article{Linten2010HBMPE, title={HBM parameter extraction and Transient Safe Operating Area}, author={Dimitri Linten and Steven Thijs and Alessio Griffoni and Mirko Scholz and S.-H. Chen and D. Lafonteese and V. A. Vashchenko and Masanori Sawada and Ann Concannon and P. Hopper and Philippe Jansen and Guido. Groeseneken}, journal={Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010}, year={2010}, pages={1-8} }