Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition

@inproceedings{Chhowalla2001GrowthPC,
  title={Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition},
  author={Manish Chhowalla and Ken B. K. Teo and Caterina Ducati and Nalin L. Rupesinghe and Gehan A J Amaratunga and A. C. Ferrari and Dona Roy and J. Robertson and W. I. Milne},
  year={2001}
}
The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C 2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our… CONTINUE READING
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