Growth of hydrogenated microcrystalline silicon thin films using electron cyclotron resonance chemical deposition method

@article{Chang2014GrowthOH,
  title={Growth of hydrogenated microcrystalline silicon thin films using electron cyclotron resonance chemical deposition method},
  author={Teng-Hsiang Chang and Yen-Ho Chu and C. C. Lee and J. W. Chang and Tomi T. Li and I. C. Chen},
  journal={2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)},
  year={2014},
  pages={237-240}
}
Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been grown on glass substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at a low temperature of 180 °C. We investigate the influence of hydrogen dilution ratio (H2/SiH4) and working pressure on structural properties as deposition rate, crystallinity, and hydrogen… CONTINUE READING