Growth of epitaxial iron disilicide on Si(100)

Abstract

The growth of epltaxiai FeSi 2 on Si(100) substrate; under ultrahigh-vacuum conditions has been achteved using two different methods: molecular beam epitaxy and the "template layer" method. The siliclde layers have been characterized by surface sensmve techniques such as Auger electron spectroscopy, electron er~ergy loss spectroscopy, scanning tunneling… (More)

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