Growth of PbTe nanowires by molecular beam epitaxy

  title={Growth of PbTe nanowires by molecular beam epitaxy},
  author={Sander G. Schellingerhout and Eline J de Jong and M. A. Gomanko and Xin Guan and Yifan Jiang and Max S.M. Hoskam and Jason Jung and Sebastian Koelling and Oussama Moutanabbir and Marcel A. Verheijen and Sergey M. Frolov and Erik P.A.M. Bakkers},
  journal={Materials for Quantum Technology},
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of… 

Figures from this paper

Selective Area Growth of PbTe Nanowire Networks on InP

Hybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. The need for scalability and complex designs calls for the development of selective

Small Charging Energies and g-Factor Anisotropy in PbTe Quantum Dots

PbTe is a semiconductor with promising properties for topological quantum computing applications. Here, we characterize electron quantum dots in PbTe nanowires selectively grown on InP. Charge

Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates

PbSe and related IV-VI rocksalt-structure semiconductors have important electronic properties that may be controlled by epitaxial strain and interfaces, thus harnessed in an emerging class of

Single-crystalline PbTe film growth through reorientation

Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principle growth modes are identified for material combinations with large lattice mismatch,

Observation of Aharonov-Bohm effect in PbTe nanowire networks

Zuhan Geng, ∗ Zitong Zhang, ∗ Fangting Chen, ∗ Shuai Yang, Yuying Jiang, Yichun Gao, Bingbing Tong, Wenyu Song, Wentao Miao, Ruidong Li, Yuhao Wang, Qinghua Zhang, Fanqi Meng, Lin Gu, Kejing Zhu,

Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots

We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Yuying Jiang*, Shuai Yang*, Lin Li*, Wenyu Song*, Wentao Miao*, Bingbing Tong, Zuhan Geng, Yichun Gao, Ruidong Li, Qinghua Zhang, Fanqi Meng, Lin Gu, Kejing Zhu, Yunyi Zang, Runan Shang, Xiao Feng,



Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along

Multimode Fabry-Perot conductance oscillations in suspended stacking-faults-free InAs nanowires.

Coherent transport involving more than a single one-dimensional mode transport was observed in the experiment and manifested by Fabry-Perot conductance oscillations, implying nearly ballistic electron transport through the nanowire.

Quasiballistic quantum transport through Ge/Si core/shell nanowires

Signals of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures are studied to inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Transport properties of single-crystalline n-type semiconducting PbTe nanowires

It is shown that single-crystalline PbTe nanowires synthesized using the chemical vapor transport method provide evidence for its intrinsic n-type semiconductor characteristics, and field-effect transistors fabricated using a single Pb Te nanowire are fabricated using the same method.

Electrical control of single hole spins in nanowire quantum dots.

Gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins and allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

Structural Characterization and Thermoelectric Transport Properties of Uniform Single-Crystalline Lead Telluride Nanowires

Uniform single-crystalline PbTe nanowires with average diameter of about 30 nm, below its average excitonic Bohr radius of 46 nm, were successfully synthesized in large quantity by a two-step

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity.

It is shown that the method can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography and it is expected that it will contribute significantly to the further optimization of the synthesis ofnanowires, nanostructures and devices based on these structures.

Majorana bound state in a coupled quantum-dot hybrid-nanowire system

This work demonstrates the emergence of MBSs from coalescing Andreev bound states (ABSs) in a hybrid InAs nanowire with epitaxial Al, using a quantum dot at the end of thenanowire as a spectrometer and observed hybridization of the MBS with the end-dot bound state, which is in agreement with a numerical model.

Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells

Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum