Growth of InN on Ge substrate by molecular beam epitaxy

Abstract

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InNJ(1 1 1)Ge. Transmission electron microscopy… (More)

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