Growth of μc-SiGe:H thin films diluted with helium and hydrogen by VHF-PECVD

@inproceedings{Zhang2008GrowthO,
  title={Growth of μc-SiGe:H thin films diluted with helium and hydrogen by VHF-PECVD},
  author={Liping Zhang and Jianjun Zhang and Xin Zhang and Zengxin Hu and Zeren Shang and Xinhua Geng and Ying Zhao},
  year={2008}
}
Inert gases, such as helium, argon and neon, have been successfully used to homogenize the plasma discharge in preparing a-SiGe alloys. In this work, varying proportional helium in hydrogen dilution is used to prepare μc-SiGe alloys by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technology on a low-temperature substrate. The optical emission intensities of SiH* and H α * in the plasma are in situ monitored, and Raman, photo-conductivity, and dark-conductivity of… CONTINUE READING

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