Growth competition between semiconducting Ge 1 −

@inproceedings{Le2012GrowthCB,
  title={Growth competition between semiconducting Ge 1 −},
  author={T. Le and Minh-Tuan Dau and Vinh Le Thanh and Dahyun Nam and Matthieu Petit and Lisa A Michez and V Nguyen and Manh-An Nguyen},
  year={2012}
}
  • T. Le, Minh-Tuan Dau, +5 authors Manh-An Nguyen
  • Published 2012
Structural and magnetic characterizations have been combined to investigate the growth kinetics of Ge1−x Mnx diluted magnetic semiconductors (DMSs) on Ge(001) substrates by means of molecular beam epitaxy (MBE). We have identified the growth process window allowing stabilization of a high Curie temperature (TC) nanocolumn phase and provide evidence that the growth of semiconducting Ge1−x Mnx nanocolumns and metallic Mn5Ge3 clusters is a competing process. Due to a continuous increase of the Mn… CONTINUE READING