Growth and structure of water on SiO2 films on Si Investigated by Kelvin probe microscopy and in Situ X-ray spectroscopies.

@article{Verdaguer2007GrowthAS,
  title={Growth and structure of water on SiO2 films on Si Investigated by Kelvin probe microscopy and in Situ X-ray spectroscopies.},
  author={Albert Verdaguer and Christoph D. Weis and Gerard Oncins and Guido Ketteler and Hendrik Bluhm and Miquel B Salmeron},
  journal={Langmuir : the ACS journal of surfaces and colloids},
  year={2007},
  volume={23 19},
  pages={9699-703}
}
The growth of water on thin SiO2 films on Si wafers at vapor pressures between 1.5 and 4 Torr and temperatures between -10 and 21 degrees C has been studied in situ using Kelvin probe microscopy and X-ray photoemission and absorption spectroscopies. From 0 to 75% relative humidity (RH), water adsorbs forming a uniform film 4-5 layers thick. The surface potential increases in that RH range by about 400 mV and remains constant upon further increase of the RH. Above 75% RH, the water film grows… CONTINUE READING