Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser

@article{Paranthoen2002GrowthAO,
  title={Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser},
  author={Cyril Paranthoen and Chris Platz and Gautier Moreau and Nicolas Bertru and Olivier Dehaese and Alain Le Corre and Patrice Miska and Jacky Even and Herv{\'e} Folliot and Christophe Labb{\'e} and J. C. Simon and Slimane Loualiche},
  journal={International Conference on Molecular Bean Epitaxy},
  year={2002},
  pages={301-302}
}
In recent years, self assembled quantum dots (QDs) have attracted much attention, because of the great potentialities expected from their zero dimensional confinement properties, especially for the realization of opto-electronic devices such as lasers. Indeed, for a QD based laser, a lower temperature dependence (high T/sub 0/), a lower chirp (/spl alpha//sub H/) and a higher modulation bandwidth are predicted compared to the conventional quantum well lasers. Numerous studies have been… CONTINUE READING

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