Growth and electronic structure of boron-doped graphene

@article{Gebhardt2013GrowthAE,
  title={Growth and electronic structure of boron-doped graphene},
  author={J. Gebhardt and R. Koch and W. Zhao and O. Hofert and K. Gotterbarm and S. Mammadov and C. Papp and A. Gorling and H.-P. Steinruck and T. Seyller},
  journal={Physical Review B},
  year={2013},
  volume={87},
  pages={155437}
}
  • J. Gebhardt, R. Koch, +7 authors T. Seyller
  • Published 2013
  • Materials Science, Physics
  • Physical Review B
  • The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the… CONTINUE READING
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