Growth and electronic structure of boron-doped graphene

@inproceedings{Gebhardt2013GrowthAE,
  title={Growth and electronic structure of boron-doped graphene},
  author={Jeff Gebhardt and Richard J. Koch and Wenchang Zhao and O. Hofert and Karin Gotterbarm and Samir Mammadov and Christian Papp and Andreas Gorling and H.-P. Steinruck and Th. Seyller},
  year={2013}
}
The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the… CONTINUE READING

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Hydrogen interaction with graphene on Ir(1 1 1): a combined intercalation and functionalization study.

  • Journal of physics. Condensed matter : an Institute of Physics journal
  • 2019
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