Growth and electronic structure of boron-doped graphene

@article{Gebhardt2013GrowthAE,
  title={Growth and electronic structure of boron-doped graphene},
  author={Julian Gebhardt and Roland J. Koch and W. Zhao and O. Hofert and Karin Gotterbarm and Samir N. Mammadov and Christian Papp and Andreas Gorling and H.-P. Steinruck and Thomas Seyller},
  journal={Physical Review B},
  year={2013},
  volume={87},
  pages={155437}
}
The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the… 

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