Growth Stress of Thin Ti-, Al- and TiAl x -Films Deposited Under UHV-conditions and its Dependence on Substrate Temperature

@inproceedings{Lackner1999GrowthSO,
  title={Growth Stress of Thin Ti-, Al- and TiAl x -Films Deposited Under UHV-conditions and its Dependence on Substrate Temperature},
  author={St. Lackner and R. Abermann},
  year={1999}
}
The growth stress of metal films was measured continuously both during as well as after their deposition under UHV-conditions with a cantilever beam technique. The metal films were deposited onto 10 rim thick alumina substrate films prepared by reactive evaporation of Al in an oxygen atmosphere. The substrate temperature for the metal deposition was varied from -20°C to 500°C. The growth stress of both titanium and aluminum films deposited at room temperature and above is characteristic of… CONTINUE READING