Group‐III‐Nitride Based Gas Sensing Devices

@inproceedings{Schalwig2001GroupIIINitrideBG,
  title={Group‐III‐Nitride Based Gas Sensing Devices},
  author={Jan Schalwig and Gerhard Dipl Ing Mueller and O. Ambacher and Martin Stutzmann},
  year={2001}
}
The paper reports on novel gas sensing devices based on III-nitride materials. Both platinum GaN Schottky diodes as well as high-electron-mobility transistors formed from GaN/AIGaN heterostructures with catalytically active platinum gates were investigated. The performance of these devices towards a number of relevant exhaust gas components (H 2 , HC, CO, NO) was tested. The test gas concentrations as well as the composition of background gases were chosen to simulate exhaust gas emissions from… CONTINUE READING

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