Green light emitting diodes on a-plane GaN bulk substrates

@article{Detchprohm2008GreenLE,
  title={Green light emitting diodes on a-plane GaN bulk substrates},
  author={T. Detchprohm and M. Zhu and Y. Li and Y. Xia and C. Wetzel and E. Preble and L. Liu and T. Paskova and D. Hanser},
  journal={Applied Physics Letters},
  year={2008},
  volume={92},
  pages={241109}
}
  • T. Detchprohm, M. Zhu, +6 authors D. Hanser
  • Published 2008
  • Physics
  • Applied Physics Letters
  • We report the development of 520–540nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN∕GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphire. Both structures show a much smaller wavelength blue shift for increasing current density (<10nm… CONTINUE READING
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