Green light emitting diodes on a-plane GaN bulk substrates

  title={Green light emitting diodes on a-plane GaN bulk substrates},
  author={T. Detchprohm and M. Zhu and Y. Li and Y. Xia and C. Wetzel and E. Preble and L. Liu and T. Paskova and D. Hanser},
  journal={Applied Physics Letters},
  • T. Detchprohm, M. Zhu, +6 authors D. Hanser
  • Published 2008
  • Physics
  • Applied Physics Letters
  • We report the development of 520–540nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN∕GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphire. Both structures show a much smaller wavelength blue shift for increasing current density (<10nm… CONTINUE READING
    73 Citations

    Figures and Tables from this paper.

    a-Plane GaN light emitting diodes on self-assembled Ni nano-islands
    • 1
    • PDF
    InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
    • 27
    Green LED development in polar and non-polar growth orientation
    • 6
    • PDF