Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon

@inproceedings{Babonneau2006GrazingIS,
  title={Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon},
  author={David Babonneau and M. F. Beaufort and Alain Decl{\'e}my and Jean François Barbot and J. Paul Simon},
  year={2006}
}
The formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50keV, 7.1015cm−2) in the temperature range of 100–550°C has been investigated by grazing incidence small-angle x-ray scattering. We show that quantitative information can be obtained on the size distribution, shape dispersion (i.e., anisotropy and faceting versus the size), and depth profile of the nanocavities from the near surface to deeply buried… CONTINUE READING