Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctions

@article{Stelzer2016GraphenicCC,
  title={Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctions},
  author={Max Stelzer and Franz Kreupl},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={21.7.1-21.7.4}
}
  • M. Stelzer, F. Kreupl
  • Published 1 December 2016
  • Engineering
  • 2016 IEEE International Electron Devices Meeting (IEDM)
Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against… 

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