Graphene transport at high carrier densities using a polymer electrolyte gate

@article{Pachoud2010GrapheneTA,
  title={Graphene transport at high carrier densities using a polymer electrolyte gate},
  author={Alexandre Jean Pachoud and Mangesh Jaiswal and Priscilla Kailian Ang and Kian Ping Loh and Barbaros {\"O}zyilmaz},
  journal={EPL (Europhysics Letters)},
  year={2010},
  volume={92},
  pages={27001}
}
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6×1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2×1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments… 

Figures from this paper

Weak localization in electric-double-layer gated few-layer graphene
We induce surface carrier densities up to  ∼7⋅1014 cm−2 in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20–30 K we
Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes
Unconventional Transport through Graphene on SrTiO3: A Plausible Effect of SrTiO3 Phase-Transitions
TLDR
A temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate shows an anomalous transport behavior in graphene on STO, and anomalies are discussed in the context of Coulomb as well as phonon scattering.
Percolation Effects in Electrolytically Gated WS2/Graphene Nano:Nano Composites.
TLDR
The addition of graphene to a semiconducting network is not a viable strategy to improve transistor performance as it reduces the on:off ratio far more than it improves the mobility.
High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts.
TLDR
The fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts is reported, indicating the possibility to utilize chemically or electrostatically highly doped graphene for versatile, flexible, and transparent low-resistance ohmic contacts to a wide range of quasi-2D semiconductors.
Hall Effect Measurements of the Double-Layer Capacitance of the Graphene–Electrolyte Interface
There is an ongoing effort to improve the energy storage capacity of graphene-based supercapacitors. These supercapacitors store energy in the electric field between the charge carriers in the
Controlled hydrogenation of graphene sheets and nanoribbons.
TLDR
A comparison of Raman spectrum and conductivity data of partially hydrogenated monolayer and bilayer graphene suggests that the latter is also quite susceptible to adsorption of hydrogen atoms, despite a stiffer lattice structure.
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor.
TLDR
The large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS, and proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride are demonstrated.
Mobility enhancement and highly efficient gating of monolayer MoS 2 transistors with polymer electrolyte
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate
Gate tunable graphene-silicon Ohmic/Schottky contacts
We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate.
...
...

References

SHOWING 1-10 OF 12 REFERENCES
A self-consistent theory for graphene transport
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to
Chirality and correlations in graphene.
TLDR
Graphene's exchange and random-phase-approximation correlation energies are evaluated to show that the tendency of Coulomb interactions in lightly doped graphene to favor states with larger net chirality leads to suppressed spin and charge susceptibilities.
Phonon-induced many-body renormalization of the electronic properties of graphene.
TLDR
The analytic theory successfully captures the essential features of the observed graphene electron spectra in the angle-resolved photoemission experiments, predicting a kink at approximately 200 meV below the Fermi level and a reduction of the band velocity by approximately 10-20% at the experimental doping level.
Optical phonon mixing in bilayer graphene with a broken inversion symmetry
Pristine bilayer graphene is a centrosymmetric material in which parity is a conserved quantity. The high sensitivity of this atomic scale structure to external perturbations that break the inversion
Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene
A.G. acknowledges the Marie Curie Foundation COMTRANS from the European Union. A.R. and C.A. are supported in part by Spanish MEC Grant No. FIS2007-65702-C02-01 , Grupos Consolidados UPV/EHU of the
Many-particle physics
1. Introductory Material.- 1.1. Harmonic Oscillators and Phonons.- 1.2. Second Quantization for Particles.- 1.3. Electron - Phonon Interactions.- A. Interaction Hamiltonian.- B. Localized Electron.-
Extended van Hove singularity and superconducting instability in doped graphene.
TLDR
It is shown that many-body interactions severely warp the Fermi surface, leading to an extended van Hove singularity (EVHS) at the graphene M point, and the ground state properties of graphene with such an EVHS are calculated.
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.
TLDR
This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
The electronic properties of graphene
Graphene is the first example of truly two‐dimensional crystals – it's just one layer of carbon atoms. It turns out that graphene is a gapless semiconductor with unique electronic properties
Modeling disorder in graphene
We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies (random, compensated, and uncompensated), local impurities, and substitutional
...
...