Graphene Spin Transistor

  title={Graphene Spin Transistor},
  author={Sungjae Cho and Yung-fu Chen and Michael S. Fuhrer},
  journal={arXiv: Mesoscale and Nanoscale Physics},
Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have very long spin-scattering times. In addition, spin injection and detection in graphene opens new opportunities to study exotic electronic states such as the quantum Hall[10,11] and quantum spin Hall[9] states, and spin-polarized edge states[12] in graphene… 

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin

Spin valve effect of NiFe/graphene/NiFe junctions

AbstractWhen spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current

Inverse spin valve effect in multilayer graphene device

We report the gate-voltage dependence of the spin transport in multilayer graphene (MLG) studied experimentally by the local measurement. The sample consists of a Ni/MLG/Ni junction, where the

Spin currents and magnetoresistance of graphene-based magnetic junctions

Using the tight-binding approximation and the nonequilibrium Green’s function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two

Spin transport properties in lower n-acene-graphene nanojunctions.

The theoretical results show that for n-acene molecules ranging from anthracene to hexacene, the spin-polarized electronic states near the Fermi level can be induced by the Spin polarized density functional theory combined with the non-equilibrium Green's function technique.

Spin-dependent quantum interference in nonlocal graphene spin valves.

This work shows the potential of quantum coherent graphene nanostructures for the use in future spintronic devices by locally tuning the carrier density in the constriction via a side gate electrode.

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in



Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube

Conventional electronic devices generally utilize only the charge of conduction electrons; however, interest is growing in ‘spin-electronic’ devices, whose operation depends additionally on the

Graphene Spin Valve Devices

Graphene-a single atomic layer of graphite-is a recently found two-dimensional (2-D) form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft

Phase-Coherent Transport in Graphene Quantum Billiards

By performing low-temperature transport spectroscopy on single-layer and bilayer graphene, ballistic propagation and quantum interference of multiply reflected waves of charges from normal electrodes and multiple Andreev reflections from superconducting electrodes are observed, thereby realizing quantum billiards in which scattering only occurs at the boundaries.

Quantum spin Hall effect in graphene.

Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

Electric field control of spin transport

Spintronics aims to develop electronic devices whose resistance is controlled by the spin of the charge carriers that flow through them1,2,3. This approach is illustrated by the operation of the most

Spin injection into carbon nanotubes and a possible application in spin-resolved scanning tunnelling microscopy

We present magnetotransport measurements on multiwall nanotubes contacted by ferromagnetic electrodes that are 1 µm apart. The observed magnetoresistance of 2.2% is consistent with a spin-scattering

Experimental observation of the quantum Hall effect and Berry's phase in graphene

An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.

Spin-dependent quantum interference in single-wall carbon nanotubes with ferromagnetic contacts

We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the

Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

There are two known distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems1,2, and the other is its

Spin injection and spin accumulation in all-metal mesoscopic spin valves

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic-metal-nonmagnetic-metal-ferromagnetic-metal (F/N/F) spin valve devices with transparent interfaces.