Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors

@article{Yu2016GrapheneCW,
  title={Graphene Coupled with Silicon Quantum Dots for High‐Performance Bulk‐Silicon‐Based Schottky‐Junction Photodetectors},
  author={Ting Yu and Feng Wang and Yang Xu and Lingling Ma and Xiaodong Pi and Deren Yang},
  journal={Advanced Materials},
  year={2016},
  volume={28}
}
Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector. 

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