Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

Abstract

For the first time, a simulation study is reported of a device formed by stacking an n+-Si layer (emitter), a monolayer graphene sheet (base), and a second n-Si layer (collector), operating as a graphene-base heterojunction transistor. The device differs from the recently proposed hot-electron graphene-base transistor (GBT), where graphene is sandwiched… (More)

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