Graphene–Silicon Schottky Diodes for Photodetection

@article{Bartolomeo2018GrapheneSiliconSD,
  title={Graphene–Silicon Schottky Diodes for Photodetection},
  author={Antonio Di Bartolomeo and Giuseppe Luongo and Laura Iemmo and Francesca Urban and Filippo Giubileo},
  journal={IEEE Transactions on Nanotechnology},
  year={2018},
  volume={17},
  pages={1133-1137}
}
We present the optoelectronic characterization of graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n- and p-type Si substrates. We show that medium n-type doping results in the highest rectification. We demonstrate high photoresponsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused… 

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