Grain boundary engineering for improved thin silicon photovoltaics.

Abstract

In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in polycrystalline silicon is generally considered to be detrimental to the physical stability and electronic transport of the bulk material. However, at the extremum of disorder, amorphous silicon is known to have a beneficially increased band gap and enhanced optical… (More)
DOI: 10.1021/nl501020q

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Cite this paper

@article{Raghunathan2014GrainBE, title={Grain boundary engineering for improved thin silicon photovoltaics.}, author={Rajamani Raghunathan and Eric C. Johlin and Jeffrey C. Grossman}, journal={Nano letters}, year={2014}, volume={14 9}, pages={4943-50} }