Gradual Degradation of GaAs FETs Under Normal Operation

@article{Millea1986GradualDO,
  title={Gradual Degradation of GaAs FETs Under Normal Operation},
  author={Michael F. Millea},
  journal={24th International Reliability Physics Symposium},
  year={1986},
  pages={125-131}
}
The gradual degradation of low-noise and power GaAs FETs under normal operating conditions has been investigated. The degradation of the drain current under both low and normal biasing was monitored for low-noise devices, but only the degradation of the drain resistance was monitored for power GaAs FETs. Using elevated temperatures to stabilize devices and… CONTINUE READING