Global parameter extraction for a multi-gate MOSFETs compact model

@article{Yao2010GlobalPE,
  title={Global parameter extraction for a multi-gate MOSFETs compact model},
  author={Shijing Yao and Tanvir H. Morshed and Darsen D. Lu and Sriramkumar Venugopalan and Weize Xiong and C. R. Cleavelin and Ali M. Niknejad and Chenming Calvin Hu},
  journal={2010 International Conference on Microelectronic Test Structures (ICMTS)},
  year={2010},
  pages={194-197}
}
A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated. 

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