Gigahertz flexible graphene transistors for microwave integrated circuits.

@article{Yeh2014GigahertzFG,
  title={Gigahertz flexible graphene transistors for microwave integrated circuits.},
  author={Chao-Hui Yeh and Yi-Wei Lain and Yu-Chiao Chiu and C. H. Liao and David Ricardo Moyano and Shawn S. H. Hsu and Po-Wen Chiu},
  journal={ACS nano},
  year={2014},
  volume={8 8},
  pages={
          7663-70
        }
}
Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate… 

Figures from this paper

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active
Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene.
TLDR
A scalable approach to fabricate radio frequency field-effect transistors with a graphene channel grown directly on the sapphire substrate using the technique of remote-catalyzed chemical vapor deposition (CVD), yielding remarkable increase of device transconductance and reduction of the associated parasitic resistance.
Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates.
TLDR
This study on state of the art flexibleGFETs demonstrates mechanical robustness and stability upon heating, two important elements to assess the potential of GFETs for flexible electronics.
Graphene-Si CMOS oscillators.
TLDR
Graphene in SiCMOS circuits is introduced to exploit favorable electronic properties of both technologies and realize a new class of simple oscillators using only a GFET, Si CMOS D latch, and timing RC circuit to pave the way to the more widespread adoption of graphene in electronics.
Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate
TLDR
The authors report a heterogeneous integration strategy for the fabrication of flexible low-cost MICs integrating membrane AlGaN/GaN high electron mobility transistor with passive impedance matching networks on cellulose nanofibril paper that enables a heterogeneously integrated and, to the authors' knowledge, the first flexible microwave amplifier that can output 10 mW power beyond 5 GHz.
A graphene based frequency quadrupler
TLDR
Dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling and can work as high performance frequency doublers and frequency triplers in suitable operation areas.
Towards the Realization of Graphene Based Flexible Radio Frequency Receiver
We report on our progress and development of high speed flexible graphene field effect transistors (GFETs) with high electron and hole mobilities (~3000 cm2/V·s), and intrinsic transit frequency in
A flexible graphene terahertz detector
We present a flexible terahertz (THz) detector based on a graphene field-effect transistor fabricated on a plastic substrate. At room temperature, this detector reveals voltage responsivity above 2
Exploiting Graphene Quantum Capacitance in Subharmonic Parametric Downconversion
This work presents for the first time the unique properties of graphene quantum capacitance (CQ) in parametric circuits. The combination of the CQ and parametric operation results in a distinct
Towards High-Transconductance Graphene High-Speed Biosensors
Graphene is a new material that is promising for application in microwave electronics as it features high mobility and is compatible with standard nanofabrications techniques. Graphene is also
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 31 REFERENCES
Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates.
TLDR
These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5% and demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high flexibility and RF operation.
Flexible gigahertz transistors derived from solution-based single-layer graphene.
TLDR
Graphene flexible transistors at gigahertz frequencies are conducted, and it is shown that solution-based single-layer graphene ideally combines the required properties to achieve high speed flexible electronics on plastic substrates.
Scalable fabrication of self-aligned graphene transistors and circuits on glass.
TLDR
A scalable approach is reported to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime, a significant advancement over previous reports.
25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets.
TLDR
Detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2-5 times higher than in prior studies.
High-frequency self-aligned graphene transistors with transferred gate stacks
TLDR
This study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits.
Graphene-Based Ambipolar RF Mixers
The combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency,
12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.
TLDR
By realizing 1 μm channel alignment for theSiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated and indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
Wafer-Scale Graphene Integrated Circuit
TLDR
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer.
Fast flexible electronics with strained silicon nanomembranes
TLDR
The combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs are demonstrated.
Extremely bendable, high-performance integrated circuits using semiconducting carbon nanotube networks for digital, analog, and radio-frequency applications.
TLDR
A proof-of-concept demonstration indicates that the semiconductor-enriched carbon nanotubes platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.
...
1
2
3
4
...