Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.

@article{dHollosy2015GigahertzQC,
  title={Gigahertz Quantized Charge Pumping in Bottom-Gate-Defined InAs Nanowire Quantum Dots.},
  author={Samuel d'Hollosy and Minkyung Jung and Andreas Baumgartner and V. A. Guzenko and Morten Hannibal Madsen and Jesper Nyg{\aa}rd and Christian Sch{\"o}nenberger},
  journal={Nano letters},
  year={2015},
  volume={15 7},
  pages={
          4585-90
        }
}
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, that is, the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to 1.3 GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain… 

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