Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

@article{Parkin2004GiantTM,
  title={Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers},
  author={S. Parkin and C. Kaiser and A. Panchula and P. Rice and B. Hughes and M. Samant and S. Yang},
  journal={Nature Materials},
  year={2004},
  volume={3},
  pages={862-867}
}
Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM)1. The performance of these devices is currently limited by the modest (<∼70%) room-temperature tunnelling magnetoresistance (TMR) of technologically relevant MTJs. Much higher TMR values have been theoretically predicted for perfectly ordered (100) oriented single-crystalline Fe/MgO/Fe MTJs. Here we show that sputter-deposited… Expand
2,321 Citations
Magnetic Tunnel Junctions for Spintronic Memories and Beyond
  • 398
  • PDF
MgO-based magnetic tunnel junctions for spin-transfer-torque random access memory
  • B. Min, I. Shin, +5 authors K. Shin
  • Materials Science
  • 10th IEEE International Conference on Nanotechnology
  • 2010
  • 1
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 31 REFERENCES
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
  • 2,804
...
1
2
3
4
...