Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

@article{Parkin2004GiantTM,
  title={Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers},
  author={Stuart S. P. Parkin and Christian R. Kaiser and Alex F. Panchula and Philip Milton Rice and Brian Hughes and Mahesh Samant and See-Hun Yang},
  journal={Nature Materials},
  year={2004},
  volume={3},
  pages={862-867}
}
Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM)1. The performance of these devices is currently limited by the modest (<∼70%) room-temperature tunnelling magnetoresistance (TMR) of technologically relevant MTJs. Much higher TMR values have been theoretically predicted for perfectly ordered (100) oriented single-crystalline Fe/MgO/Fe MTJs. Here we show that sputter-deposited… 
Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier
A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier) sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance (TMR) due to
Over 100% magnetoresistance ratio at room temperature in magnetic tunnel junctions with CuGaSe2 spacer layer
We investigated the structure and magneto-transport properties of magnetic tunnel junctions (MTJs) consisting of half-metallic Co2FeGa0.5Ge0.5 ferromagnetic electrodes and a semiconductive CuGaSe2
Pinholes in thin low resistance MgO-based magnetic tunnel junctions probed by temperature dependent transport measurements
Magnetic tunnel junctions (MTJs) with thin crystalline MgO(001) barriers displaying large tunnel magnetoresistance (TMR) and low resistance-area product (R×A) will likely be used as the next
Effect of deposition conditions and annealing temperature on tunnel magnetoresistance and structure of MgO-based double-barrier magnetic tunnel junctions
The performance of spintronics devices - such as magnetoresistive random access memories, non-volatile logics, and hard disk drives readers - has been improved over the past two decades due to the
Tunnel magnetoresistance in ultrathin L10 MnGa/MgO perpendicular magnetic tunnel junctions
L10 MnGa is one of the interesting magnetic alloys for spin-transfer-torque based applications because such alloys have high perpendicular magnetic anisotropy, small magnetization, and low Gilbert
Large magnetocapacitance beyond 420% in epitaxial magnetic tunnel junctions with an MgAl2O4 barrier
Magnetocapacitance (MC) effect has been observed in systems where both symmetries of time-reversal and space-inversion are broken, for examples, in multiferroic materials and spintronic devices. The
Magnetic Tunnel Junctions for Spintronic Memories and Beyond
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets separated by a thin
Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT)
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers
Although single-crystalline spinel (MgAl2O4)-based magnetic tunnel junctions (MTJs) are known to show a good bias voltage dependence of a tunnel magnetoresistance (TMR) ratio over MgO-based MTJs, no
Boosting Room Temperature Tunnel Magnetoresistance in Hybrid Magnetic Tunnel Junctions Under Electric Bias
Spin‐resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 31 REFERENCES
High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
We fabricated fully epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) and observed a magneto-resistance (MR) ratio of 88% at T = 293 K (146% at T = 20 K), the highest value yet
High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions
We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel
Electrical properties of MgO insulating layers in spin-dependent tunneling junctions using Fe3O4
We investigated the growth conditions and electrical properties of MgO epitaxial thin films, which have potential applications as insulating layers for spin-dependent tunneling devices where Fe3O4
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TLDR
b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.
Magnetically engineered spintronic sensors and memory
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of
Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)
We present tunneling experiments on Fe(001)/MgO(20 A)/FeCo(001) single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give
Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy
Using molecular-beam-epitaxy growth techniques, we have synthesized ferromagnet/insulator/ferromagnet trilayer heterostructures with the “colossal” magnetoresistance material La1−xSrxMnO3 as the
Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction
Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe(001) junction is reported. The conductances of the junction in its ferromagnetic and antiferromagnetic configurations
70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference Layers
Spin dependent tunneling (SDT) wafers were deposited using dc magnetron sputtering. SDT junctions were patterned and connected with one layer of metal lines using photolithography techniques. These
Fe/MgO/FeCo(100) epitaxial magnetic tunnel junctions prepared by using in situ plasma oxidation
Fe/MgO/FeCo epitaxial magnetic tunnel junctions (MTJs) were prepared on MgO(100) single crystal substrates by using in situ plasma oxidation for the formation of MgO barriers. The epitaxial
...
1
2
3
4
...